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Electrochemical and chemical doping behavior of bithiophene-bithiazole copolymer

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BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN
卷 81, 期 4, 页码 536-538

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CHEMICAL SOC JAPAN
DOI: 10.1246/bcsj.81.536

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An alternating copolymer of 4,4'-dialkyl-2,2'-bithiazole (alkyl = tridecyl) and 2,2'-bithiophene receives electro-chemical p-doping and n-doping with a peak current anode potential (E-pa) and a peak cur-rent cathode potential (E-pc) of 0.69 and -2.13 V vs. Ag+/Ag, respectively. The copolymer undergoes chemical p-doping with NOBF4. X-ray diffraction (XRD) data of the p-doped copolymer indicate that the pi-stacking distance of the copolymer is shortened from 3.62 to 3.52 angstrom after the p-doping. Location of the BF4- dopant in the p-doped copolymer is discussed.

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