Effect of electrodeposition potential on composition and morphology of CIGS absorber thin film

CuInGaSe (CIGS) thin films were deposited on Mo/soda-lime glass substrates by electrodeposition at different potentials ranging from -0 center dot 3 to -1 center dot 1 V vs Ag/AgCl. Cyclic voltammetry (CV) studies of unitary Cu, Ga, In and Se systems, binary Cu-Se, Ga-Se and In-Se systems and quaternary Cu-In-Ga-Se were carried out to understand the mechanism of deposition of each constituent. Concentration of the films was determined by energy dispersive spectroscopy. Structure and morphology of the films were characterized by X-ray diffraction and scanning electron microscope. The underpotential deposition mechanism of Cu-Se and In-Se phases was observed in voltammograms of binary and quaternary systems. Variation in composition with applied potentials was explained by cyclic voltammetry (CV) data. A suitable potential range from -0 center dot 8 to -1 center dot 0 V was found for obtaining films with desired and stable stoichiometry. In the post-annealing films, chalcopyrite structure starts forming in the samples deposited at -0 center dot 5 V and grows on varying the applied potential towards negative direction. By adjusting the composition of electrolyte, we obtained the desired stoichiometry of Cu(In0 center dot 7Ga0 center dot 3)Se-2.