FERROELECTRIC PROPERTIES OF (Bi0.5Na0.5) TiO3-BASED THIN FILM PREPARED BY PULSED LASER DEPOSITION

We have developed a uniform and dense epitaxial thin film of 0.94(Bi0.5Na0.5)TiO3 - 0.04 x (Bi0.5Na0.5)TiO3 - 0.02BaTiO(3) on a SrRuO3 coated SrTiO3 substrate by pulsed laser deposition method. The remnant polarization, coercive field and dielectric constant of the film with thickness of 315 nm, were measured to be 16.6 mu C center dot cm(-2), 147.5 kV center dot cm(-1) and 640 (at 1 kHz), respectively. The film exhibited a high breakdown voltage and low leakage current of 1.1 x 10(-5) A center dot cm(-2) at 310 kV center dot cm(-1). This (Bi0.5Na0.5)TiO3-based thin film with a target composition in the rhombohedral side of the morphotropic phase boundary can be considered a potential candidate for relatively high power applications.