期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 19, 页码 10407-10413出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b01598
关键词
electromagnetic absorption; wide bandgap; semiconductors; nanoparticles; 2D electron gas; plasmon
资金
- College of Arts and Sciences, University of Missouri Kansas City (UMKC)
- University of Missouri Research Board
- National Natural Science Foundation of China [11174273]
Electromagnetic interactions in the microelectronvolt (mu eV) or microwave region have numerous important applications in both civil and military fields, such as electronic communications, signal protection, and antireflective coatings on airplanes against microwave detection. Traditionally, nonmagnetic wide-bandgap metal oxide semiconductors lack these mu eV electronic transitions and applications. Here, we demonstrate that these metal oxides can be fabricated as good microwave absorbers using a 2D electron gas plasma resonance at the disorder/order interface generated by a hydrogenation process. Using ZnO and TiO2 nanoparticles as examples, we show that large absorption with reflection loss values as large as -49.0 dB (99.99999%) is obtained in the microwave region. The frequency of absorption can be tuned with the particle size and hydrogenation condition. These results may pave the way for new applications for wide bandgap semiconductors, especially in the mu eV regime.
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