Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction

In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe3O4/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm(-1). The optical response time and relaxation time of LPE were similar to 60 ns and 5 mu s, respectively. The enhanced LPE properties and the fast relaxation time in the Fe3O4/Si junction were caused by the formation of the inversion layer in the interface of Fe3O4/Si.