Ultra-Fast Fabrication of < 110 >-Oriented -SiC Wafers by Halide CVD

phi 80 mm-diameter, highly < 110 >-oriented -SiC wafers were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (T-dep) and total pressure (P-tot) on the orientations, microstructures, and deposition rate (R-dep) were investigated. R-dep dramatically increased with increasing T-dep where maximum R-dep was 930 m/h at T-dep = 1823 K and P-tot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The < 110 >-oriented -SiC was obtained at T-dep > 1773 K and P-tot = 1-4 kPa. Growth mechanism of < 110 >-oriented -SiC has also been discussed under consideration of crystallographic lanes, surface energy, and surface morphology.