期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 34, 期 1, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4940129
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资金
- RENATECH-IEMN
- Region Rhone-Alpes through the ARC 6 Program
- RENATECH-PTA
In this paper, the authors focus on two well-identified switching mechanisms, namely, interfacial (or homogeneous) switching and filamentary switching. These switching mechanisms have been reported in various devices, but a broader analysis remains to be conducted. By comparing the performances of TiO2- and HfO2- based resistive switching devices in terms of variability, retention, controllability, and switching energy, the authors discuss how oxygen vacancies organization can determine a general set of properties that will define the range of applications that could be envision for each material/device technology. (C) 2016 American Vacuum Society.
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