Electronic Properties of Structures Containing Films of Alq(3) and LiBr Deposited on Si(111) Crystal

The electronic structures of Alq(3)/Si(111) and Alq(3)/LiBr/ Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq(3) and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.