期刊
NATURE ELECTRONICS
卷 1, 期 7, 页码 398-403出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41928-018-0099-8
关键词
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资金
- National Research Foundation of Korea [NRF-2015M3D1A1070465, 2017R1A2A2A05069760, 2017M2A2A6A01071238, 2017R1A2B2006119]
- DGIST R&D Program of the Ministry of Science and ICT [18-BT-02]
Spintronic devices offer low power consumption, built-in memory, high scalability and reconfigurability, and could therefore provide an alternative to traditional semiconductor-based electronic devices. However, for spintronic devices to be useful in computing, complementary logic operation using spintronic logic gates is likely to be required. Here we report a complementary spin logic device using electric-field controlled spin-orbit torque switching in a heavy metal/ferromagnet/oxide structure. We show that the critical current for spin-orbit-torque-induced switching of perpendicular magnetization can be efficiently modulated by an electric field via the voltage-controlled magnetic anisotropy effect. Moreover, the polarity of the voltage-controlled magnetic anisotropy can be tuned through modification of the oxidation state at the ferromagnet/oxide interface. This allows us to create both n-type and p-type spin logic devices and demonstrate complementary logic operation.
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