期刊
NATURE ELECTRONICS
卷 1, 期 4, 页码 228-236出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41928-018-0058-4
关键词
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资金
- College of Engineering and School of Industrial Engineering at Purdue University
- Oak Ridge Associated Universities (ORAU) Junior Faculty Enhancement Award Program
- National Science Foundation [CMMI-1663214]
- NSF/AFOSR 2DARE Program
- ARO
- SRC
- Center for Low Energy Systems Technology (LEAST)
- South West Academy of Nanoelectronics (SWAN)
- Resnick Prize Postdoctoral Fellowship at Caltech
- UT Austin
- Computational Materials Sciences Program - US Department of Energy (DOE), Office of Science, Basic Energy Sciences [DE-SC00014607]
- DOE EERE
- NSF [ACI-1053575]
- DOE [DE-AC02-05CH11231]
The reliable production of two-dimensional (2D) crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can create crystals with process-tunable thickness, from a monolayer to tens of nanometres, and with lateral sizes of up to 100 mu m. The chiral-chain van der Waals structure of tellurene gives rise to strong in-plane anisotropic properties and large thickness-dependent shifts in Raman vibrational modes, which is not observed in other 2D layered materials. We also fabricate tellurene field-effect transistors, which exhibit air-stable performance at room temperature for over two months, on/off ratios on the order of 10(6), and field-effect mobilities of about 700 cm(2) V-1 s(-1). Furthermore, by scaling down the channel length and integrating with high-k dielectrics, transistors with a significant on-state current density of 1 A mm(-1) are demonstrated.
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