期刊
PHYSICAL REVIEW B
卷 97, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.045424
关键词
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资金
- NSERC
- CIFAR
- Hydro-Quebec
- L'Institut d'Energie Trottier
- Canada Research Chairs program
- NSF [DMR-0084173]
- State of Florida
- US Department of Energy
- European Research Council [648589]
- Deutsche Forschungsgemeinschaft [CRC 1238, A1, GR 3708/2-1]
- CERIC-ERIC consortium
- Centre National de la Recherche Scientifique
- Commissariat a l'Energie Atomique et aux Energies Alternatives, France
Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm(2)/V s at T = 1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.
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