期刊
PHYSICAL REVIEW B
卷 97, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.035122
关键词
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资金
- U.S. Department of Energy (DOE), Office of Science (OS), Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-FG02-07ER46383]
- Office of Basic Energy Sciences of the U.S. DOE [DE-AC02-05CH11231]
- ALS Doctoral Fellowship in Residence
- U.S. National Science Foundation [EFMA-1542747]
- Thematic Project at Academia Sinica
- National Science Foundation of China [11204133]
- Fundamental Research Funds for the Central Universities [30917011338]
- Deutsche Forschungsgemeinschaft [FL 974/1-1]
- Emerging Frontiers & Multidisciplinary Activities [1542747] Funding Source: National Science Foundation
Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.
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