期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 186-190出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2888888
关键词
Phase transition FET; steep switching devices; FDSOI; threshold selector
资金
- National Research Foundation of Korea - Korea Government (MSIP) [2017R1A2A2A05069708]
- Ministry of Trade, Industry Energy
- Korea Semiconductor Research Consortium through the Future Semiconductor Device Technology Development Program [10067746]
Gate configuration phase transition fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistor (MOSFET) without an external resistor is proposed using Pb(Zr0.52Ti0.48)O-3 (PZT)-based threshold selector (TS). Under 1 mu A compliance current condition, the PZT-based TS exhibits its threshold switching property at similar to 0.9 V (threshold voltage) and similar to 0.01 V (hold voltage) over similar to 4 orders of current. And its off-resistance is measured as similar to 2.3 x 10(11) Omega. The PZT-based gate configuration phase transition FDSOI MOSFET without an external resistor was fabricated by connecting the PZT-based TS to a baseline FDSOI MOSFET. It is confirmed that the fabricated external resistor-free phase transition FDSOI MOSFET can operate regardless of the aforementioned 1 mu A of compliance current condition. This device has not only demonstrated the feature of similar to 4 mV/decade subthreshold slope at similar to 0.96 V of gate voltage, but it also has decreased the gate leakage current of the baseline FDSOI MOSFET by similar to 10 times at 0 V of gate voltage and similar to 320 times at 2 V of gate voltage.
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