期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 57-61出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2877495
关键词
Gallium oxide; Schottky diode; rectifiers
资金
- Department of the Defense, Defense Threat Reduction Agency [HDTRA1-17-1-011]
- Office of Naval Research [N00014-15-1-2392]
- ONR Global [N62909-16-1-2217]
An inductive load test circuit was used to measure the switching performance of field-plated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 x 10(-3) cm(2) area) and an absolute forward current of 1 A on 8 mu m thick epitaxial beta-Ga2O3 drift layers. The recovery characteristics for these vertical geometry beta-Ga2O3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 degrees C.
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