期刊
JOURNAL OF SEMICONDUCTORS
卷 40, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/40/1/011802
关键词
gallium oxide (Ga2O3); ultra-wide bandgap semiconductor; power device; field effect transistor (FET)
资金
- National Natural Science Foundation of China [61521064, 61522408, 61574169, 61334007, 61474136, 61574166]
- Ministry of Science and Technology of China [2016YFA0201803, 2016YFA02038 00, 2017YFB0405603]
- Key Research Program of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSWJSC048, QYZDY-SSW-JSC001]
- Beijing Municipal Science and Technology Project [Z171100002017011]
- Opening Project of the Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (similar to 4.8 eV) and large Baliga's figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
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