期刊
IEEE ACCESS
卷 8, 期 -, 页码 14048-14053出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2020.2966577
关键词
Gate dielectric defects; random telegraphic noise; channel hot carriers
资金
- Singapore Ministry of Education Tier 2 Research [MOE2016-T2-2-102]
Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this presumption is only valid for about two-thirds of the oxide-trap population studied. For the remaining one-third, the traps' capture and/or emission time constants could be changed by the channel hot-carrier (CHC) effect. Such a behavior is found in both polysilicon/silicon oxynitride gated and TiN/HfO2 gated transistors. A reversion of the altered trap time constant to the value before the CHC-stress is also observed, but the period varies significantly for different traps (from several hours to months). Since the CHC stress effect is present in all scaled transistors, the findings would have important implications for models/applications that presume oxide-trap properties to be stress-invariant.
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