期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 8, 期 -, 页码 717-723出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.3008789
关键词
Junctionless; ferroelectric field effect transistor; non-volatile memory; ferroelectric HfO2; indium-gallium-zinc-oxide (IGZO)
资金
- Japan Science and Technology Agency PRESTO [JPMJPR1525]
- Japan Society for the Promotion of Science KAKENHI [JP18H01489]
- Tokyo Electron Limited
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with minimum 8 nm channel thickness, thanks to the properties of IGZO material, junctionless FET operation, nearly-zero low-k interfacial layer on metal-oxide channel and effective capping for realizing ferroelectric phase formation with HfZrO2 (HZO). The controllable memory operations are achieved with the use of back gate. The design guideline of IGZO FeFET is proposed by discussing the thickness of front gate oxide HZO and back gate oxide SiO2 using TCAD simulation. The material and electrical properties of metal/HZO/IGZO/metal capacitor are also investigated. Metal/HZO/IGZO/metal capacitor has up to 10(8) endurance and over one-year retention. IGZO FeFET shows a potential for high-density and low-power memory application.
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