Novel Porphyrin-Perylene diimide for ultrafast high-performance resistive memory devices

The novel solution-processable porphyrin-perylene diimide (TPP-6FDI-TPP) was synthesized via condensation of 5-(4-aminophenyl)-10,15,20-triphenylporphyrin (ATPP) (electron donor) and 4,4'-(hexafluoroisoprpoylidine) diphthalic anhydride (6FDA) (electron acceptor), and the structure of TPP-6FDI-TPP was confirmed by FTIR and NMR spectroscopy. Its optical and electrochemical properties were evaluated via ultraviolet visible spectroscopy and cyclic voltammetry, respectively. Furthermore, this dyad showed good solubility in organic solvent, which is desirable for smooth thin-film formation and application in electronic devices. The current-voltage (I-V) results of the sandwich memory device (ITO/thin layer of TPP-6FDI-TPP/Al) indicated that it exhibits a volatile nature with static random-access memory (SRAM) behavior. Moreover, the sandwich device showed a high ON/OFF current ratio up to 105, as well as excellent long-term operation stability over 108 read cycles with no current degradation up to 4000 s of retention time. The electrical function of the donor/acceptor moiety and the charge transfer (CT) in the dyad were related to the electrical switching effect, which was further investigated on the basis of electrochemical and optical measurements, as well as quantum simulation results. More importantly, the different work functions of various noble metals inserted into the porphyrin ring may lead to promising memory behaviors. The present study opens a new direction for researchers to utilize the 18 p-electron system of porphyrin, which can be easily modified via complexation with different transition metals, and which is expected to be employed for future memory applications.

Automated summary

A novel solution-processable porphyrin-perylene diimide compound was synthesized and evaluated for its optical and electrochemical properties. The compound showed good solubility in organic solvents, making it suitable for thin-film formation and electronic device applications. Testing of the memory device indicated excellent memory behavior and stability.