Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

We report on fabrication and characterization of blue GaN-InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 degrees C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. (C) 2000 American Institute of Physics. [S0003-6951(00)01103-7].