GaN microdisk light emitting diodes

Microdisk light-emitting diodes (mu-LEDs) with diameter of about 12 mu m have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these mu-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of mu-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)03805-5].