期刊
PHYSICA E
卷 6, 期 1-4, 页码 440-443出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S1386-9477(99)00212-X
关键词
InAs quantum dots; resonant photoluminescence; Auger processes
An experimental evidence of Anger-like excitation processes in InAs/GaAs quantum dots is demonstrated . Photoluminescence spectra of resonantly excited dots exhibit a rich satellite structure below the ground-state emission band. The energy position and the intensity distribution of the satellites are analyzed and an interpretation of the satellites as due to shake-up processes of the interacting carriers in the higher quantum dot states is suggested. (C) 2000 Elsevier Science B.V. All rights reserved.
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