期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 47, 期 2, 页码 448-457出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.822293
关键词
gallium compounds; photovoltaic cells; photovoltaic cell measurements; modeling
Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall recombination, A detailed study of the recombination mechanisms values shows differences between literature data and data derived from comparison of simulation results with measurements on real devices. A new evaluation of these data is given. The evaluation of the band-gap narrowing in n-GaSb is performed by comparison of measurements and simulations of the injection component of the dark current l(01) and open-circuit voltage. Far the first time, a range of possible values for the intrinsic carrier concentration of GaSb at room temperature is given, based on theoretical calculations, and proven with comparison of measured I-01 and open-circuit voltages of GaSb photovoltaic devices.
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