期刊
PHYSICAL REVIEW LETTERS
卷 84, 期 6, 页码 1232-1235出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.1232
关键词
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The highest equilibrium free-carrier doping concentration possible in a given material is limited by the pinning energy which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n-type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the (3-)-charged cation vacancy in AlN, GaN, InP, and GaAs and the (1-)-charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials.
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