期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 39, 期 2B, 页码 L123-L125出版社
JAPAN J APPLIED PHYSICS
DOI: 10.1143/JJAP.39.L123
关键词
MOS tunnel diode; negative-capacitance; ultrathin oxide; conductivity modulation; impedance spectra
A negative capacitance (NC) effect in metal oxide semiconductor tunnel diodes (MOSTD) is reported. The phenomenon is observed with forward-biased minority carrier type MOSTDs with low measurement frequencies. Enhancements of the effect with the higher substrate resistivity and with the increase of the minority carrier injection indicate that the effect arises from conductivity modulation in the substrate. The equivalent circuit consisting of a parallel inductor-resistor pair in series with the ordinary equivalent circuit of a MOSTD biased in accumulation is found to be a good first order representation of the measured impedance spectra.
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