Thermally assisted tunnelling in Cu(Tn,Ga)Se2-based photovoltaic devices

The effect of thermally assisted tunnelling has been found to explain the commonly observed non-linearities of admittance and RDLTS Arrhenius plots. In terms of this model the light induced increase of thp emission rates has bren ascribed to the lowering of the tunnelling barrier. We have proposed that the physical picture underlying these metastabilities is essentially the same as used Tol explanation of the cross-over effect. These statements are confirmed by numerical calculations. (C) 2000 Elsevier Science S.A. All rights reserved.