期刊
THIN SOLID FILMS
卷 361, 期 -, 页码 268-272出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(99)00817-2
关键词
tunnelling; Cu(In,Ga)Se-2; deep level transient spectroscopy; interface states
The effect of thermally assisted tunnelling has been found to explain the commonly observed non-linearities of admittance and RDLTS Arrhenius plots. In terms of this model the light induced increase of thp emission rates has bren ascribed to the lowering of the tunnelling barrier. We have proposed that the physical picture underlying these metastabilities is essentially the same as used Tol explanation of the cross-over effect. These statements are confirmed by numerical calculations. (C) 2000 Elsevier Science S.A. All rights reserved.
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