期刊
THIN SOLID FILMS
卷 361, 期 -, 页码 183-186出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(99)00860-3
关键词
copper indium diselenide; atomic layer epitaxy; indium sulfide; solar cell; zinc oxysulfide
As a soft and highly controllable deposition technique, atomic layer epitaxy (ALE) is well suited to deposit buffer and window layers on CIS thin solar films with high interface quality. In this work we have investigated ALE buffer layers of zinc oxysulfide, indium sulfide and aluminum oxide deposited at low temperature (160 degrees C). The most promising results have been obtained with using indium sulfide buffer layers, with a record efficiency of 13.5% (30.6 mA /cm(2), 604 mV, FF = 0.73 under 100 mW /cm(2), without AR coating) achieved on a standard CIGS absorber. This opens a route for a dry cadmium-free buffer process fully compatible with the other vacuum deposition techniques (coevaporation, sputtering). (C) 2000 Elsevier Science S.A. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据