期刊
SURFACE SCIENCE
卷 448, 期 2-3, 页码 219-224出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(99)01215-7
关键词
gallium arsenide; scanning tunneling microscopy; stepped single crystal surfaces; surface structure, morphology, roughness, and topography
Scanning tunneling microscopy has been used to evaluate surface roughness and step structures of cleaved GaAs(110) surfaces. It is found that they ape dependent on the direction of the force applied during cleaving. The flattest surface having fairly straight [111]-type steps is obtained when cleaving samples toward the [110] direction. Cleaving samples toward [001] also leads to smooth surfaces with [001]-, [112]-, and/or [114]-type steps. In contrast, when cleaving samples toward [112] or [114], the surfaces obtained have many fluctuated atomic steps. We will discuss the observed shearing orientation dependence of the cleavage step structures in terms of configurations of As-Ga bonds. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
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