期刊
APPLIED PHYSICS LETTERS
卷 76, 期 15, 页码 2074-2076出版社
AMER INST PHYSICS
DOI: 10.1063/1.126259
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The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined. (C) 2000 American Institute of Physics. [S0003-6951(00)01615-6].
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