Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) and Si(100) surfaces is examined by synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely, suboxides and dioxides, on both the surfaces. Upon annealing, the oxide layers decompose and desorb as monoxides. However, we find that the decomposition pathways are different from each other. On annealing Ge oxides, GeO2 species transform to GeO and remain on the surface and desorb at > 420 degrees C. In contrast, annealing of Si oxides results in the transformation of SiO to SiO2 up to temperatures (similar to 780 degrees C) close to the desorption. At higher temperatures, SiO2 decomposes and desorbs, implying a reverse transformation to volatile SiO species. (C) 2000 American Institute of Physics. [S0003-6951(00)04816-6].