4.8 Article

Decay of silicon mounds: Scaling laws and description with continuum step parameters

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PHYSICAL REVIEW LETTERS
卷 84, 期 16, 页码 3662-3665

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AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.3662

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The decay of mounds about a dozen layers high on the Si(111)-(7 X 7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions fur the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals.

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