期刊
IEEE ELECTRON DEVICE LETTERS
卷 21, 期 5, 页码 209-211出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.841298
关键词
epitaxial layers; interconnected systems; photovoltaic cells
Theoretical calculations predict a higher power conversion efficiency for the combination of Ga0.35In0.65P and Ga0.83In0.17As in a tandem solar cell, compared to the more commonly used Ga0.51In0.49P/GaAs approach. A record conversion efficiency of 21.6% (AMI.5g) was recently achieved for a 1.18 eV Ga0.83In0.17As solar cell, grown lattice-mismatched to the GaAs substrate material. This paper reports on the device characteristics of first Ga0.35In0.65P/Ga(0.65)In(0.17)AS tandem solar cells based on this very promising GaInAs material. A high quantum efficiency, comparable to the lattice matched Ga0.51In0.49P on GaAs approach was achieved. A power conversion efficiency of 25.5% was measured under AM1.5d spectral conditions.
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