期刊
JOURNAL OF APPLIED PHYSICS
卷 87, 期 9, 页码 5457-5459出版社
AMER INST PHYSICS
DOI: 10.1063/1.373371
关键词
-
Epitaxial Fe34Co66 films in a thickness range from 3 to 100 monolayers (MLs) were grown by molecular beam epitaxy on GaAs(001) at room temperature. The growth was characterized by reflection high energy electron diffraction and x-ray diffraction. The magnetic properties were investigated by alternating gradient magnetometry magneto-optic Kerr effect, and superconducting quantum interference device magnetometry. The films show a strong interface-induced uniaxial in-plane anisotropy with the easy axis along [110]. In addition, the fourfold anisotropy coefficient changes sign around 6 ML i.e., the easy axis of the fourfold anisotropy switches from < 110 > to < 100 > with decreasing thickness. (C) 2000 American Institute of Physics. [S0021-8979(00)31408-6].
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据