期刊
JOURNAL OF APPLIED PHYSICS
卷 87, 期 9, 页码 4673-4675出版社
AMER INST PHYSICS
DOI: 10.1063/1.373126
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Introduction of a ferromagnetic quantum well in a ferromagnetic tunnel junction is shown to greatly enhance the tunneling magnetoresistance (TMR) effect, due to spin filtering as well as energy filtering. We have theoretically analyzed resonant transmission probability of a magnetic double barrier heterostructure consisting of III-V based ferromagnetic semiconductor GaMnAs, and nonmagnetic semiconductor AlAs. Experimentally, we have observed very large TMR effect of such a system grown by low-temperature molecular-beam epitaxy, and have shown that some of the measured tunneling features are attributed to spin-dependent resonant tunneling. (C) 2000 American Institute of Physics. [S0021-8979(00)52808-4].
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