期刊
PHYSICAL REVIEW LETTERS
卷 84, 期 18, 页码 4224-4227出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.4224
关键词
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The exchange bias coupling at ferromagnetic/antiferromagnetic interfaces in epitaxially grown Co/CoO layers can intentionally be increased by a factor of up to 3 if the antiferromagnetic CoO layer is diluted by nonmagnetic defects in its volume part away from the interface. Monte Carlo simulations of a simple model of a ferromagnetic layer on a diluted antiferromagnet show exchange bias and explain qualitatively its dilution and temperature dependence. These investigations reveal that diluting the antiferromagnet leads to the formation of volume domains, which cause and control exchange bins.
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