期刊
THIN SOLID FILMS
卷 366, 期 1-2, 页码 28-31出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(00)00711-2
关键词
physical vapour deposition; vanadium oxide; metal-oxide semiconductor structure; phase-transitions
Vanadium dioxide (VO2) thin films have been deposited reproducibly by a new direct sputter process without post-annealing on r-cut (1 (1) over bar 02 sapphire substrates. X-ray diffraction shows that the films are nearly perfectly oriented and only (k00) planes parallel to the surface of the substrate are obtained. The produced thin films show a semiconductor to metal transition at 63 degrees C with a hysteresis as low as 2 K accompanied with a change in the electrical resistivity of nearly 10(5). Fur examination of the surface layer of the VO2, metal-insulator-semiconductor (MIS)-elements have been produced where a photo-resist was used as an insulating layer. Capacitance-voltage (C-V) curves have been obtained with a symmetrical bell-shaped behavior. (C) 2000 Elsevier science S.A. All rights reserved.
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