Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 mu C/cm(2), and the dielectric loss was 2.5% for a 0.5-mu m-thick film. (C) 2000 American Institute of Physics. [S0003-6951(00)01720-4].