期刊
PHYSICAL REVIEW B
卷 61, 期 19, 页码 12602-12604出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.61.12602
关键词
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Two phosphorus centers in SiC, an isolated P atom substituting for Si (P-Si) and a Si-site P-atom adjacent to a carbon vacancy (P-Si + V-C) are investigated by first principle calculations. It is shown that P-Si + V-C produces a singly occupied donor level which lies deeper than that of P-Si but above the double donor level of Ve. The calculated spin distribution indicates that the P-related paramagnetic resonance signals, P-1,P-2 and P-V, originate from this complex.
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