期刊
SURFACE SCIENCE
卷 454, 期 -, 页码 45-48出版社
ELSEVIER
DOI: 10.1016/S0039-6028(00)00091-1
关键词
Auger electron spectroscopy; growth; low energy electron diffraction (LEED); low index single crystal surfaces; scanning tunneling microscopy; silicon carbide; surface structure, morphology, roughness, and topography
A (2 x 2) reconstruction on 6H-SiC(000 (1) over bar), obtained by annealing an ex situ prepared or a silicon-capped sample, was investigated using quantitative low-energy electron diffraction. The surface geometry is characterized by one silicon adatom per unit cell in three-fold hollow coordination (H-3 sites). The topmost two substrate bilayers are found to be preferentially rotated by 60 degrees with respect to each other, corresponding to a hexagonal type of stacking present at the very surface. (C) 2000 Elsevier Science B.V. All rights reserved.
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