期刊
SURFACE SCIENCE
卷 454, 期 -, 页码 539-542出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(00)00065-0
关键词
indium arsenide; metal-semiconductor interfaces; photoemission (total yield); Schottky barrier
High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states. (C) 2000 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据