Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Electron holography has been used to image electrostatic potential variations across an AlGaN/InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface. (C) 2000 American Institute of Physics. [S0003-6951(00)01721-6].