ZnO diode fabricated by excimer-laser doping

A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current-voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K. (C) 2000 American Institute of Physics. [S0003-6951(00)02722-4].