A study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA and UVIII

Based on a recently developed process for T-gate fabrication using a PMMA/UVIII bilayer, the effect of electron forward scattering in UVIII resist (as the head layer) on the footwidth of T-gates was studied experimentally. The electron beam spread by forward scattering in UVIII resist was measured as the function of resist thickness at 50 kV and 100 kV. The minimum possible size of T-gates fabricated using this method was shown to be about 30 nm at 100 kV.