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Determination of energy gap in Cd1-xZnxTe (x=0-0.06)

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 15, 期 6, 页码 561-564

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IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/15/6/313

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A dependence of energy gap on composition x for Cd1-xZnxTe (x = 0-0.06) was found combining x-ray diffraction and low temperature photoluminescence measurements (free exciton energy) on Cd1-xZnxTe single crystals. The use of this dependence for evaluation of Zn content (x) in the crystals shows very good agreement with the near infrared absorption method. Published dependences E-g (x) are reviewed and compared with the dependence Eg(x, T = 4 K) = 1.606 + 0.520x + 0.254x(2) derived in this work.

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