期刊
JOURNAL OF CRYSTAL GROWTH
卷 214, 期 -, 页码 524-528出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(00)00144-5
关键词
accepters; doping; ZnSe; MOMBE; GaAs; clusters
Nitrogen (N) acceptor doping in ZnSe has been difficult with metalorganic vapor-phase epitaxy or metalorganic molecular-beam epitaxy (MOMBE) due to the neutralization effect by the N-hydrogen bonding. Doping of nano-clusters of p-type GaAs in ZnSe is proposed for realizing p-type ZnSe. A initial growth process of GaAs on ZnSe surfaces was studied to realize the doping of GaAs nano-clusters. A net acceptor concentration of 1 x 10(17) cm(-3) was observed by this method with MOMBE. (C) 2000 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据