期刊
SOLID-STATE ELECTRONICS
卷 44, 期 6, 页码 949-958出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(00)00012-5
关键词
nonvolatile semiconductor memory; polysilocon-blocking oxide-nitride-tunnel oxide-silicon; metal nitride-oxide-silicon; EEPROM; retention; retention reliability
The charge retention characteristics in scaled SONGS nonvolatile memory devices with an effective gate oxide thickness of 94 A and a tunnel oxide of 15 A are investigated in a temperature range from room temperature to 175 degrees C, Electron charge decay rate is sensitive to the temperature, whereas hole charge decay rate remains essentially constant. Based on experimental observations and an amphoteric trap model for nitride traps, an analytical model for charge retention of the excess electron state is developed. Using this thermal activated electron retention model, the trap distribution in energy within the nitride film is extracted. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
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