Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)05123-8].