Dispersive transport of protons in oxides confined in Si/SiO2/Si structures

Protons have been thermally generated in the gate oxides of n-channel field effect transistors formed using the buried oxide of silicon on insulator (SOI) unibond wafers as the gate oxide and the top Si layer as the gate. The transport of the protons under applied electric field is dispersive, can be modeled using continuous time random-walk theory, and is suggested to he significantly more rapid than in the case of radiation induced protons in thermally grown oxides. An unexpected asymmetry observed in the electrical response in the SOI structures remains unexplained.