期刊
PHYSICAL REVIEW B
卷 61, 期 23, 页码 15558-15561出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.61.15558
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Raman backscattering measurements were performed on boron and phosphorous doped polycrystalline silicon films with an average grain size varying between 150 and 2500 nm. The B- and P-doped samples exhibit free hole and electron concentrations of up to 5 x 10(20) and 2 x 10(21) cm(-3), respectively. The incorporation of dopants results in a shift of the Raman LO-TO line to smaller wave numbers. At B and P concentrations higher than mid 10(19) cm(-3) the phonon lines are asymmetric. This is discussed in terms of a resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance.
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