期刊
PHYSICAL REVIEW B
卷 61, 期 24, 页码 R16283-R16286出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.61.R16283
关键词
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In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a DX-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.
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