期刊
PHYSICAL REVIEW LETTERS
卷 84, 期 26, 页码 6078-6081出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.6078
关键词
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Since the time of Bardeen, Fermi level pinning at metal-semiconductor interfaces has traditionally been attributed to interface gap states. The present work shows that polarized chemical bonds at metal-semiconductor interfaces can lead to the apparent Fermi level pinning effect. Good agreement with various systematics of polycrystalline Schottky barrier height experiments has been found. These findings suggest that chemical bonding is a primary mechanism of the Schottky barrier height.
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